Rom [54]. Sputtering yield by one hundred keV Ne ion can also be given. Power Ion (MeV)32 S forty Ar 58 Ni 127 I 136 Xe 136 Xe 20 NeYXD (10- 14 cm2 )E (MeV) 80 60 89 84 99Se (keV/nm) 6.62 eight.three 13.72 18.92 21.60 27.14 0.Sn (keV/nm) 0.007 0.014 0.031 0.205 0.20 0.112 0.Rp Ysp 13 9.five eleven 8.eight 8.eight 13 0.12 1.09 2.08 4.0 7.0 11 0.80 60 90 85 one hundred 200 0.0.788 one.3 0.Quantum Beam Sci. 2021, five,9 ofFigure four exhibits the XRD intensity degradation YXD vs. electronic stopping power (Se ) (GLPG-3221 Autophagy SRIM2013 and TRIM1997) along with the sputtering yields Ysp vs. Se . The two YXD and Ysp observe the power-law fit and the exponent for YXD employing TRIM1997 offers a somewhat greater value than that using SRIM2013. The exponent of lattice disordering is just about the identical as that of sputtering. The modify inside the lattice parameter c appears to scatter, and approximately -0.2 and -0.1 with an estimated error of 0.1 are obtained for (a hundred) and (002) diffractions by one hundred MeV Xe at 10 1012 cm-2 , assuming that c is proportional towards the ion fluence. c is obtained at -0.3 for (002) diffraction by 200 MeV Xe at five 1012 cm-2 , and no appreciable alter during the lattice parameter is observed by 90 MeV Ni ions at 40 1012 cm-2 ; extra information are wanted.Figure 4. XRD degradation per unit fluence YXD of polycrystalline ZnO movie vs. electronic stopping energy Se (TRIM1997 and SR2013). Power-law fit to YXD = (0.057Se )one.32 (TRIM1997) (o, blue dotted line) and (0.0585 Se )one.sixteen (SRIM2013) (, black dotted line). Sputtering yield Ysp vs. Se (TRIM1997, ) and Se (SR2013, x) is additionally shown. Sputtering yield from [54]. Power-law fits to Ysp: (0.175 Se )1.57 for each Se from TRIM1997 and SR2013 is indicated by green dotted line.three.3. Fe2 O3 The XRD intensity at a diffraction angle of 33 and 36 (corresponding to diffraction planes of (104) and (110)) normalized to these of unirradiated Fe2 O3 films on C-Al2 O3 and SiO2 glass substrates as being a function from the ion fluence is proven in Figure five for 90 MeV Ni10 , one hundred MeV Xe14 and 200 MeV Xe14 ion influence. It seems the XRD intensity degradation is AAPK-25 Purity & Documentation nearly independent on the diffraction planes and substrates. The XRD intensity degradation per unit fluence YXD is given in Table 4, together with the sputtering yields [60] and stopping powers (SRIM2013). The X-ray (Cu-k) attenuation length LXA is obtained to become 8.eight [80] and the attenuation depth is 2.5 and 2.7 for that diffraction angle of 33 and 36 , respectively, which are considerably more substantial the film thickness of 100 nm and thus the X-ray attenuation correction is pointless. The acceptable vitality for that XRD vs. Se plot, applying half-way approximation (E – Se /2) with all the film thickness of one hundred nm, again provides almost precisely the same as E for sputtering, through which the vitality reduction of the carbon foil of one hundred nm is taken into account.Quantum Beam Sci. 2021, five,ten ofFigure five. XRD intensity normalized to unirradiated films of Fe2 O3 like a perform of ion fluence for 90 MeV Ni ( , , ), a hundred MeV Xe (o, , , x) and 200 MeV Xe ( , , ) ions. Diffraction peaks at 33 of Fe2 O3 films on C-Al2 O3 substrate ( (90 MeV Ni), o (one hundred MeV Xe), (200 MeV Xe)), 36 of movies on C-Al2 O3 ((90 MeV Ni), (one hundred MeV Xe), (200 MeV Xe)), 33 of films on SiO2 glass substrate ( (90 MeV Ni), (a hundred MeV Xe), (200 MeV Xe)) and 36 of films on SiO2 glass substrate ( (90 MeV Ni), x (100 MeV Xe), (200 MeV Xe)). Information of one hundred MeV Xe are from [60]. Linear match is indicated by dotted lines. An estimated error of XRD intensity is ten . Table four. XRD data of Fe2 O3 movies. Ion, vitality (E i.